Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB ...
Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240
Structure Epitaxial planar type NPN silicon transistor
0.5±0.1
Dimensions (Unit : mm)
2SD1766
4.5+−00..21 1.6±0.1
1.5
+0.2 −0.1
2SD1758
6.5±0.2 5.1+−00..21
C0.5
2.3+−00..21 0.5±0.1
5.5+−00..31 1.5±0.3 0.9 1.5
2.5 9.5±0.5
4.0±0.3 2.5+−00..21
1.0±0.2
(1) (2) (3)
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
0.4±0.1 1.5±0.1
0.4
+0.1 −0.05
Abbreviated symbol : DB∗
ROHM : MPT3 EIAJ : SC-62
(1) Base (2) Collector (3) Emitter
2SD1862
6.8±0.2
2.5±0.2
0.75 0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1 1.0±0.2
(1) (2) (3)
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
4.4±0.2
1.0 0.9
0.65Max.
14.5±0.5
0.5±0.1 (1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter (2) Collector (3) Base
∗ Denotes hFE
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base
voltage
VCBO
40
Collector-emitter
voltage
VCEO
32
Emitter-base
voltage
VEBO
5
Collector current
2 IC
2.5 ∗1
Collector power dissipation
2SD1766
2SD1758 2SD1862
0.5 2 ∗2 PC 10 1 ∗3
Junction temperature
Tj 150
Storage temperature
Tstg −55~+150
∗1 Single pulse, PW=20ms
∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager.
Unit V V V
A (DC) A (Pulse)
W
W (TC=25°C) W °C °C
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