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2SD1763A Datasheet

Part Number 2SD1763A
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2SD1763A Datasheet2SD1763A Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Complement to Type 2SB1186A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Volt.

  2SD1763A   2SD1763A






Part Number 2SD1763
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1763A Datasheet2SD1763 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1763 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Good Linearity of hFE ·Complement to Type 2SB1186 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage .

  2SD1763A   2SD1763A







Part Number 2SD1763
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1763A Datasheet2SD1763 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1763 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High breakdown voltage VCEO ·Complement to type 2SB1186 ·High transition frequency APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Colle.

  2SD1763A   2SD1763A







Part Number 2SD1763
Manufacturers Rohm
Logo Rohm
Description Power Transistor
Datasheet 2SD1763A Datasheet2SD1763 Datasheet (PDF)

Transistors 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 (94L-268-A56) (96-175-C56) 276 .

  2SD1763A   2SD1763A







Silicon NPN Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Complement to Type 2SB1186A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1763A isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1763A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 160 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1 μA hFE DC Current Gain IC= 0.1A; VCE= 5V 60 200 COB Output .


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