Power Transistors
2SD1755
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ...
Power Transistors
2SD1755
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
7.2±0.3 0.8±0.2
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
1.0±0.2
q
q q
High forward current transfer ratio hFE which has satisfactory linearity High emitter to base
voltage VEBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
10.0 –0.
+0.3
s Features
1.1±0.1 0.75±0.1
0.85±0.1 0.4±0.1
2.3±0.2 4.6±0.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
Ratings 100 60 15 12 6 3 15 1.3 150 –55 to +150
Unit V
10.2±0.3 7.2±0.3
V V A A A
3.0±0.2
1.0 max.
2.5
1.1±0.1
0.75±0.1
0.5 max.
0.9±0.1 0 to 0.15
1
2
3
W
2.3±0.2
˚C ˚C
4.6±0.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage Forward current transfer ratio Collector to emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE* VCE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 1...
