Power Transistors
2SD1754, 2SD1754A
Silicon NPN triple diffusion planar type
For power amplification with high forward ...
Power Transistors
2SD1754, 2SD1754A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
7.2±0.3 0.8±0.2
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
1.0±0.2
q q q
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 80 100 60 80 6 6 3 1 15 1.3 150 –55 to +150 Unit V
10.0 –0.
+0.3
s Features
1.1±0.1 0.75±0.1
0.85±0.1 0.4±0.1
2.3±0.2 4.6±0.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD1754 2SD1754A 2SD1754 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
3.0±0.2
10.2±0.3 1.0 max.
Emitter to base
voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature
V A A A
2.3±0.2 1.1±0.1 0.75±0.1
2.5
0.5 max.
0.9±0.1 0 to 0.15
1
2
3
W ˚C ˚C
4.6±0.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current 2SD1754 2SD1754A
(TC=25˚C)
Symbol ICBO ICEO IEBO Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz 30 60 80 500 1500 1 V MHz min typ max 100 100 100...
