2SD1751

Power Transistors 2SD1751 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1170 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q 10.0 –0. +0.3 7.2±0.3 0.8±0.2 1.1±0.1 0.85±0.1 0.4±0.1 q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 60 6 4 2 15 1.3 150 –55 to +150 Unit V 1.0±0.2 0.75±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 3.0±0.2 10.2±0.3 7.2±0.3 V A A 1.0 max. 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 W 1 2 3 ˚C ˚C 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf IC = 1A, IB1 = ...