2SD1749A

Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Complementary to 2SB1179 and 2SB1179A q q q 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm High foward current transfer ratio hFE High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 5 8 4 15 1.3 150 –55 to +150 Unit V 7.2±0.3 0.8±0.2 s Features 1.1±0.1 1.0±0.2 10.0 –0. +0.3 0.85±0.1 0.4±0.1 0.75±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1749 2SD1749A 2SD1749 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.3±0.2 4.6±0.4 1 2 3 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 emitter voltage 2SD1749A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V 10.2±0.3 3.0±0.2 1.0 max. A W ˚C ˚C 2.3±0.2 4.6±0.4 1.1±0.1 2.5 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1749 2SD1749A 2SD1749 2SD1749A 2SD1749 2SD1749A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, I...