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2SD1739 Datasheet

Part Number 2SD1739
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1739 Datasheet2SD1739 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1739 www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·Wide area of safe operation ·High voltage,high speed APPLICATIONS ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pe.

  2SD1739   2SD1739






Part Number 2SD1739
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1739 Datasheet2SD1739 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collect.

  2SD1739   2SD1739







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1739 www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·Wide area of safe operation ·High voltage,high speed APPLICATIONS ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7 6 18 2.5 100 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1739 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-base breakdown voltage CONDITIONS IC=5A ;IB=1.2A IC=5A ;IB=1.2A IE=1mA ;IC=0 VCB=750V; IE=0 7 10 1 10 6 2 30 MHz MIN TYP. MAX 8.0 1.5 UNIT V V V µA mA µA SYMBOL VCEsat VBEsat V(BR)EBO ICBO Collector cut-off current VCB=1500V; IE=0 IEBO hFE fT Emitter cut-off current DC current gain Transition frequency VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V Switching times tstg tf Storage time IC=5A; IB1=1A IB2=-2A; VCC=200V Fall time 0.2 µs 1.5 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.data.


2009-05-08 : 2SD1718    2SD1729    2SD1739    2SD1761    2SD1762    2SD1763    2SD1765    2SD1772    2SD1772A    2SD1773   


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