2SD1723

Ordering number:ENN2021A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1166/2SD1723 50V/8A Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switchint time. Package Dimensions unit:mm 2043B [2SB1166/2SD1723] 8.0 4.0 2.0 2.7 1.5 9.0 11.0 1.6 0.8 3.0 15.5 0.8 0.6 0.5 ( ) : 2SB1166 Specifications Absolute Maximum Ratings at Ta = 25˚C 12 3 2.4 4.8 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126LP Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C (–)60 (–)50 (–)6 (–)8 (–)12 1.2 20 150 –55 to +150 V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 hFE2 VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)0.5A VCE=(–)2V, IC=(–)6A Gain-Bandwidth Product fT VCE=(–)5V, IC=(–)1A * : The 2SB1166/2SD1723 are classified by 0.5A hFE as follows : Rank Q R Ratings min typ max Unit (–)1 µA (–)1 µA 70* 400* 35 180 MHz (130) MHz Continued on next page. ST hFE 70 to 140 100 to 200 140 to 280 200 to 400 Any and all SANYO products described or contained herein do not have spe...