2SD1719

Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features High forward current transfer ratio hFE which has satisfactory linearity High emitter-base voltage (Collector open) VEBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 100 60 15 6 12 3 40 1.3 150 −55 to +150 °C °C Unit V V V A A A W (6.5) 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time Symbol VCEO ICBO IEBO hFE VCE(sat) fT ton tstg tf Conditions IC = 25 mA, IB = 0 VCB = 100 V, IE = 0 VEB = 15 V, IC = 0 VCE = 4 V, IC = 1 A IC = 5 A, IB = 0.1 A VCE = 12 V, IC = 0.5 A, f = 10 MHz IC = 5 A IB1 ...