isc Silicon NPN Power Transistor
2SD1711
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Spee...
isc Silicon NPN Power Transistor
2SD1711
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current- Continuous
5
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
16
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 4.5A; IB= 2A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 4.5A; IB= 2A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC Current Gain
tf
Fall Time
IC= 0.5A ; VCE= 5V
IC= 4A , IB1= 0.8A ; IB2= 1.6A PW=20μs; Duty Cycle≤1%
2SD1711
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10 μA
40
130 mA
8
0.5 μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notifi...
