2SD1707

Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB1156 21.0±0.5 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) ■ Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 130 80 7 20 30 100 3.0 150 −55 to +150 °C °C Unit V V V A A W 16.2±0.5 5.45±0.3 10.9±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage * Conditions IC = 10 mA, IB = 0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 3 A VCE = 2 V, IC = 10 A IC = 8 A, IB = 0.4 A IC = 20 A, IB = 2 A IC = 8 A, IB = 0.4 A IC = 20 A, IB = 2 A VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 8 A, ...