Power Transistors
2SD1705
Silicon NPN epitaxial planar type
Unit: mm
(0.7)
For power switching Complementary to 2SB115...
Power Transistors
2SD1705
Silicon NPN epitaxial planar type
Unit: mm
(0.7)
For power switching Complementary to 2SB1154
21.0±0.5
15.0±0.3 11.0±0.2
5.0±0.2 (3.2)
■ Features
Low collector-emitter saturation
voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw
φ 3.2±0.1
15.0±0.2 (3.5) Solder Dip
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 130 80 7 10 20 70 3.0 150 −55 to +150 °C °C Unit V V V A A W
16.2±0.5
5.45±0.3 10.9±0.5 1 2 3
1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter
voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 Collector-emitter saturation
voltage
*
Conditions IC = 10 mA, IB = 0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 3 A VCE = 2 V, IC = 6 A IC = 6 A, IB = 0.3 A IC = 10 A, IB = 1 A IC = 6 A, IB = 0.3 A IC = 10 A, IB = 1 A VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 6 A, IB...