isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 330V(Min) ·High Power Dissi...
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown
Voltage-
: V(BR)CBO= 330V(Min) ·High Power Dissipation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
330
V
VCES
Collector-Emitter
Voltage
330
V
VCEO
Collector-Emitter
Voltage
200
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
7
A
ICP
Collector Current-Pulse
ICP
Collector Current-Pulse (unrepetitive)
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
10
A
15
A
70
W
150
℃
Tstg
Storage Temperature
-55~150
℃
2SD1680
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SD1680
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 30mA; IB= 0
200
V
VCE(sat) Collector-Emitter Saturation
Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation
Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5A; IB= 0.5A
VCE= 330V; VBE= 0; VCE= 300V; VBE= 0; Ta= 100℃
VEB= 6V; IC= 0
1.0
V
1.2
V
0.1 1.0
mA
1.0
mA
hFE
DC Current Gain
IC= 5A; VCE= 4V
15
45
tf
Fall Time
IC= 5A; IB1= 0.8A; VEB= -5V, RB=0.5Ω
0.75 μs
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