2SD1649

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1649 www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·Built-in damper diode ·High voltage ,high speed APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 2.5 10 50 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.datasheet4u.com 2SD1649 SYMBOL TYP. MAX UNIT V(BR)EBO V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT Emitter-base breakdown voltage IE=200mA , IC=0 IC=0.1A; RBE=< IC=5mA; IE=0 IC=2A; IB=0.6A IC=2A; IB=0.6A VCB=800V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IF=2.5A IC=2A;IB1=0.6A;IB2=-1.2A VCC=200V;RL=100B 7 V Collector-emitter breakdown voltage 800 V Collector-base breakdown voltage 1500 V Collector-emitter saturation voltage 8.0 V Base-emitter saturation voltage 1.5 V Collector cut-off current 10 µA Emitter cut-off current 40 130 mA DC current gain 8 Transition ...