2SD1633

Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm 0.7±0.1 For voltage switching ■ Features High-speed switching Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 100 100 7 5 8 0.5 30 2.0 150 −55 to +150 °C °C Unit V V V A A A W 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter sustaining voltage *2 Collector-base cutoff current (Emitter open) Collector-emitter cut-off current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol Conditions VCB = 100 V, IE = 0 VCE = 100 V, IB = 0 VEB = 7 V, IC = 0 VCE = 3 V, IC = 3 A IC = 3 A, IB = 3 mA IC = 3 A, IB = 3 mA VCE = 10 V, ...