DatasheetsPDF.com

2SD1621 Datasheet

Part Number 2SD1621
Manufacturers Kexin
Logo Kexin
Description NPN Epitaxial Planar Silicon Transistor
Datasheet 2SD1621 Datasheet2SD1621 Datasheet (PDF)

SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1621 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature .

  2SD1621   2SD1621






Part Number 2SD1621
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SD1621 Datasheet2SD1621 Datasheet (PDF)

Ordering number:1787A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1121/2SD1621 High-Current Driver Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2038 Features · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Large current capacity and wide ASO. · Fast switching speed. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. [2SB1121/2SD1621] E : .

  2SD1621   2SD1621







NPN Epitaxial Planar Silicon Transistor

SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1621 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 30 25 6 2 5 500 1.3 150 -55 to +150 Unit V V V A A mW W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type 2SD1621 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on timie Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 20 V, IE=0 VEB = 4 V, IC=0 VCE = 2 V , IC = 100 mA VCE = 10 V , IC = 50 mA VCB = 10 V , f = 1.0MHz Transistors Min Typ Max 0.1 0.1 Unit ìA ìA 100 150 19 0.18 0.85 30 25 6 60 560 MHz pF 0.4 1.2 V V V V V ns VCE(sat) IC = 1.5 A , IB = 75 mA VBE(sat) IC = 1.5 A , IB = 75 mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton .


2013-11-13 : 2SD1622    2SD1623    2SD1628    2SD1628    2SD1815    2SD1817    2SD1818    2SD1819A    2SD1819A    UPG2411T6R   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)