2SD1620

Ordering number : EN1719D 2SD1620 Bipolar Transistor 10V, 3A, Low VCE(sat), NPN Single PCP http://onsemi.com Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted Large current capacity and highly resistant to breakdown Excellent linearity of hFE in the region from low current to high current Ultrasmall size supports high-density, ultrasmall-sized hybrid IC designs Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEX VCEO VEBO IC ICP Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SD1620-TD-E 1.5 Conditions Ratings Unit 30 V 20 V 10 V 6V 3A 5A Continued on next page. Product & Package Information Package : PCP JEITA, JEDEC : SC-62, SOT-89, TO-243 Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD Marking 1.0 2.5 4.0 DC LOT No. 1 0.4 2 0.5 1.5 3.0 3 0.4 0.75 Bottom View 1 : Base 2 : Collector 3 : Emitter PCP TD Electrical Connection 2 1 3 Semiconductor Components Industries, LLC, 2013 September, 2013 82212 TKIM/31010EA TKIM/31005TN(PC)/21599TH (KT)/N1596TS(KOTO)8-7707/5277KI/3045MW, TS No.1719-1/6 2SD1620 Continued from preceding page. Parameter Collector Dissipation Junction Temperature Storage Temperature Symbol PC Tj Tstg Conditions When mounted on ceramic substrate (250mm2×...