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2SD1619

NPN Transistor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1619 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) ·Complement to Type 2SB1119 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF Amp Electronic Governor applications. ABSOLUTE MAXIMUM R...

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