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2SD1606

Part Number	2SD1606
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 16, 2016
Datasheet	2SD1606 PDF File

Features

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 3A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
AP...

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