DatasheetsPDF.com

2SD1562 Datasheet

Part Number 2SD1562
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1562 Datasheet2SD1562 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complement to type 2SB1085/1085A ·High transition frequency APPLICATIONS ·For low freuqency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER 2SD1562 VCBO Collector-base voltage 2SD1562A 2SD1562 VCEO Collector-emitter voltage 2SD1562A VEB.

  2SD1562   2SD1562






Part Number 2SD1562
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1562 Datasheet2SD1562 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1085 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5.0 V I.

  2SD1562   2SD1562







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complement to type 2SB1085/1085A ·High transition frequency APPLICATIONS ·For low freuqency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER 2SD1562 VCBO Collector-base voltage 2SD1562A 2SD1562 VCEO Collector-emitter voltage 2SD1562A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 Open collector Open base 160 5 1.5 3.0 20 W V A A Open emitter 160 120 V CONDITIONS VALUE 120 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD1562 IC=1mA; IB=0 2SD1562A 2SD1562 IC=50µA; IE=0 2SD1562A IE=50µA; IC=0 IC=1 A;IB=0.1 A IC=1 A;IB=0.1 A VCB=120V; IE=0 VEB=4V; IC=0 2SD1562 hFE DC current gain 2SD1562A fT COB Transition frequency Output capacitance IE=-0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=5V CONDITIONS www.datasheet4u.com 2SD1562 2SD1562A SYMBOL MIN 120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 160 120 V 160 5 2.0 1.5 1.0 1.0 60 60 80 20 320 200 MHz pF V V V µA µA V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBEsat ICBO IEBO Emitter-base breakdown v.


2009-05-05 : SEL4929    2SC5665    2SC5666    NLN    AM5888S    CAL4-40100    SOGC-01    SOGC-03    SOGC-51    SOGC-45   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)