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2SD1541 Datasheet

Part Number 2SD1541
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1541 Datasheet2SD1541 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1541 www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High voltage ,and high reliability ·Built-in damper diode ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collecto.

  2SD1541   2SD1541






Part Number 2SD1541
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1541 Datasheet2SD1541 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 5 V IC Collector C.

  2SD1541   2SD1541







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1541 www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High voltage ,and high reliability ·Built-in damper diode ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 3 10 3.5 50 130 -55~130 UNIT V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1541 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)EBO Emitter-base breakdown voltage IE=500mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.75A 5.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.75A 1.5 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 µA 1 mA hFE DC current gain IC=2A ; VCE=10V 4 12 VF Diode forward voltage IC=-4A 2.2 V Switching times tstg Storage time IC=2A IBend=0.75A;LLeak=5µH 3.0 7.0 µs tf Fall time 0.75 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datashe.


2009-05-04 : ADUC816    MD1803DFP    EU1Z    EU1    EU1A    EU1C    C3170    2SD1265    2SD1265A    2SD1266   


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