2SD1535

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO = 500V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current 7 A ICM Collector Current-peak 14 A IB Base Current Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 2 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1535 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1535 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA V BE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 70mA ICBO Collector Cutoff Current VCB= 500V; IE= 0 ICEO Collector Cutoff Current VCE= 400V; IB= 0 IEBO Emitter Cutoff Current VEB= 12V; IC= 0 hFE-1 DC Current Gain IC= 2A; VCE= 2V hFE-2 DC Current Gain IC= 6A; VCE= 2V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 7A; IB1= IB2= 70mA, VCC= 300V MIN TYP. MAX UNIT 400 V 2.0 V 2.5 V 0.1 m...