2SD1531

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 5 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1531 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 50V; IE= 0 ICEO Collector Cutoff Current VCE= 10V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V COB Collector Output Capacitance IE= 0; VCB= 20V; f= 1MHz  hFE Classifications P ...