DatasheetsPDF.com

2SD1525 Datasheet

Part Number 2SD1525
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Darlington Power Transistor
Datasheet 2SD1525 Datasheet2SD1525 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Coll.

  2SD1525   2SD1525






Part Number 2SD1525
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN Transistor
Datasheet 2SD1525 Datasheet2SD1525 Datasheet (PDF)

2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1525 High Current Switching Applications Unit: mm · High collector current: IC = 30 A · High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) · Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C.

  2SD1525   2SD1525







Silicon NPN Darlington Power Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1525 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1525 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20A, IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 20A, IB= 0.2A ICBO Collector Cutoff current VCB= 100V, IE= 0 IEBO Emitter Cutoff current VEB= 5V, IC= 0 hFE-1 DC Current Gain IC= 20A; VCE= 5V hFE-2 DC Current Gain IC= 30A; VCE= 5V VECF C-E Diode Forward Voltage IF= 10A fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz Switching Times ton Turn-On Time tstg Storage Time tf .


2013-12-27 : 8742AH    8042AH    8242AH    8041AH    8741AH    PM200RL1A060    PM200RLA060    PM200RSA060    PM200RSA060    PM200RSD060   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)