2SD1478A

Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 0.65±0.15 2.8 –0.3 +0.2 1.5 –0.05 +0.25 0.65±0.15 2.9 –0.05 1.9±0.2 +0.2 q q Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. A shunt resistor is omitted from the driver. (Ta=25˚C) Ratings 30 60 25 50 5 750 500 200 150 –55 ~ +150 Unit V 0.95 1 0.95 3 0.4 –0.05 +0.1 2 1.45 s Features 1.1 –0.1 Collector to base voltage Collector to 2SD1478 2SD1478A 2SD1478 VCBO VCEO VEBO ICP IC PC Tj Tstg emitter voltage 2SD1478A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 2N(2SD1478) 2O(2SD1478A) Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1478 2SD1478A 2SD1478 2SD1478A 0 to 0.1 Parameter Symbol 0.1 to 0.3 0.4±0.2 0.8 s Absolute Maximum Ratings (Ta=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE*1 VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 500mA*2 IC = 500mA, IB = 0.5mA*2 IC = 500mA, IB = 0.5mA*2 VCB = 10V, IE = –50mA, f = 200MHz...