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2SD1457A Datasheet

Part Number 2SD1457A
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1457A Datasheet2SD1457A Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High DC current gain ·DARLINGTON ·High VCBO APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PFa) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SD1457 VCEO Collector-emitter voltage 2SD1457A VEBO IC ICM .

  2SD1457A   2SD1457A






Part Number 2SD1457A
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN triple diffusion Transistor
Datasheet 2SD1457A Datasheet2SD1457A Datasheet (PDF)

Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 3.2 s Features q q q 16.2±0.5 12.5 3.5 Solder Dip High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 200 150 200 5 10 6 60 3 150 –55 to +150 Unit V 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratin.

  2SD1457A   2SD1457A







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High DC current gain ·DARLINGTON ·High VCBO APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PFa) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SD1457 VCEO Collector-emitter voltage 2SD1457A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3.0 150 -55~150 Open collector Open base 200 5 6 10 60 W V A A CONDITIONS Open emitter MAX 200 150 V UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD1457 IC=2A ;L=10mH 2SD1457A IE=0.1A ;IC=0 IC=3A ;IB=60mA IC=3A ;IB=60mA VCB=200V; IE=0 IC=2A ; VCE=2V IC=0.5A ; VCE=10V;f=1MHz CONDITIONS www.datasheet4u.com 2SD1457 2SD1457A SYMBOL MIN 150 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 200 5 1.5 2.5 100 700 15 10000 MHz V V V µA V(BR)EBO VCEsat VBEsat ICBO hFE fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Transition frequency hFE Classifications Q 700-2500 P 2000-5000 O 4000-10000 2 SavantIC Semiconductor Product.


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