INCHANGE Semiconductor
isc
Silicon NPN Darlington
Power Transistor
2SD1446
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 400V(Min) · Low Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain...