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2SD1415
NPN Transistor
Description
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation
Voltage
- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB1020 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI...
INCHANGE
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