2SD1412A

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications 2SD1412A Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (max) at IC = 4 A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 70 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 7 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 30 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10R1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 1.7 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-21 Electrical Characteristics (Tc = 25°C) 2SD1412A Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Tr...