isc Silicon NPN Power Transistor
2SD1412
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 4A ·...
isc Silicon NPN Power Transistor
2SD1412
DESCRIPTION ·Low Collector Saturation
Voltage
: VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current switching applications. ·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
70
V
VCEO
Collector-Emitter
Voltage
50
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon NPN Power Transistor
2SD1412
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 4A; IB= 0.4A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 4A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 70V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 1V
hFE-2
DC Current Gain
IC= 4A; VCE= 1V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 4V
Switching Times
ton
Turn-on T...