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2SD1406 Datasheet

Part Number 2SD1406
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1406 Datasheet2SD1406 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 · www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Fig.1 simplified outline (TO-220Fa) and symbol Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base.

  2SD1406   2SD1406






Part Number 2SD1406
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1406 Datasheet2SD1406 Datasheet (PDF)

isc Silicon NPN Power Transistor 2SD1406 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Complement to Type 2SB1015 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage .

  2SD1406   2SD1406







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 · www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Fig.1 simplified outline (TO-220Fa) and symbol Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 60 7 3 0.5 2.0 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA; IB=0 IC=3A; IB=0.3A IC=0.5A ; VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=0.5A; VCE=5V IE=0 ;f=1MHz ; VCB=10V 60 20 MIN 60 www.datasheet4u.com 2SD1406 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 0.25 0.7 1.0 1.0 100 100 300 V V µA µA 3 70 MHz pF Switching times ton ts.


2009-05-04 : ADUC816    MD1803DFP    EU1Z    EU1    EU1A    EU1C    C3170    2SD1265    2SD1265A    2SD1266   


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