2SD1395

Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications · Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). Package Dimensions unit:mm 2010C Features · High DC current gain. · Large current capacity · Wide ASO. · On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. · High inductive load handling capability. Specifications 18.0 5.6 [2SD1395] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2 0.8 123 2.55 2.55 2.7 14.0 0.4 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature * : With Zener diode of (60±10V). Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C Conditions Ratings 50* 50* 6 5 8 0.5 40 150 –55 to +150 Unit V V V A A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT VCE(sat) VBE(sat) VCB=40V, IE=0 VEB=5V, IC=0 VCE=3V, IC=2.5A VCE=5V, IC=2.5A IC=2.5A, IB=5mA IC=2.5A, IB=5mA Ra...