2SD1376(K)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1012(K)
Outline
...
2SD1376(K)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1012(K)
Outline
TO-126 MOD
2
3 1. Emitter 2. Collector 3. Base ID 6 kΩ (Typ) 0.5 kΩ (Typ) 1
1
2
3
2SD1376(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) PC * Tj Tstg ID*
1 1
Rating 120 120 7 1.5 3.0 20 150 –55 to +150 1.5
Unit V V V A A W °C °C A
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 120 7 — — 2000 — — — — — — — Typ — — — — — — — — — — 0.5 2.0 Max — — 100 10 30000 1.5 2.0 2.0 2.5 3.0 — — V V V V V µs µs Unit V V µA µA Test conditions I C = 10 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1 I C = 1 A, IB1 = –IB2 = 1 mA Collector to emitter breakdown V(BR)CEO
voltage Emitter to base breakdown
voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage C to E diode forward
voltage Turn on time Turn off time Note: 1. Pulse test. hFE VCE (sat)1 VCE (sat)2 VBE (sat)1 VBE (sat)2 VD Ton Toff
2
2SD1376(K)
Maximum Collector Dissi...