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2SD1371

Part Number	2SD1371
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 24, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·High Power Dissipation ·Minimum Lot-t...
Datasheet	2SD1371 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching mode power supply and electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal R...

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