isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
:hFE= 2000(Min) @ IC= 2A ·Collector-Emitt...
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
:hFE= 2000(Min) @ IC= 2A ·Collector-Emitter Sustaining
Voltage-
:VCEO(SUS)= 100V (Min) ·Low Collector-Emitter Saturation
Voltage-
:VCE(sat)= 1.5V (Max) @ IC= 2A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency amplifier and low-speed
switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
100
V
VCEO
Collector-Emitter
Voltage
100
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current
5
A
ICM
Collector Current-peak
10
A
IB
Base Current
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃
Tj
Junction Temperature
0.5
A
30 W
1.5
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1308
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 2A; IB= 2mA
VBE(sat) Base-Emitter Saturation
Voltage
IC= 2A; IB= 2mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2A; VCE= 2V
hFE-2
DC Current Gain
IC= 4A ; VCE= 2V
2SD1308
MIN TYP. MAX UNIT
100
V
1.5
V
2.0
V
1.0 μA
5
mA
...
