isc
Silicon NPN
Power Transistor
INCHANGE Semiconductor
2SD1301
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1500V (Min) ·High
Switching Speed ·Low Collector Saturation
Voltage-
: VCE(sat)= 3.0V(Max.)@ IC= 1A ·Wide area of safe operation ·Built-in ...