isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD130
DESCRIPTION ·DC Current Gain -hFE = 15(Min)@ IC= 3A ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 60V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE ...
