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2SD1295 Datasheet

Part Number 2SD1295
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP Transistor
Datasheet 2SD1295 Datasheet2SD1295 Datasheet (PDF)

Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1295 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board High collector to emitter VCEO Large collector power dissipation PC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter v.

  2SD1295   2SD1295






Part Number 2SD1298
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1295 Datasheet2SD1298 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor 2SD1298 DESCRIPTION ·High DC Current Gain : hFE= 200(Min.)@ IC= 6A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Co.

  2SD1295   2SD1295







Part Number 2SD1297
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1295 Datasheet2SD1297 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor 2SD1297 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO.

  2SD1295   2SD1295







Part Number 2SD1297
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1295 Datasheet2SD1297 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1297 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High DC current gain ·Low saturation voltage APPLICATIONS ·For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector.

  2SD1295   2SD1295







Part Number 2SD1296
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1295 Datasheet2SD1296 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor 2SD1296 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO.

  2SD1295   2SD1295







Part Number 2SD1296
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1295 Datasheet2SD1296 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1296 ·Wit www.datasheet4u.com DESCRIPTION h TO-3PN package ·High DC current gain ·Low saturation voltage APPLICATIONS ·For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-.

  2SD1295   2SD1295







Silicon PNP Transistor

Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1295 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board High collector to emitter VCEO Large collector power dissipation PC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 (Ta=25˚C) Ratings –50 –40 –5 –3 –1.5 20 150 –55 to +150 Unit V V V A A W 0.6 2.3 2.3 0.75 6.5±0.2 5.35 4.35 1:Base 2:Collector 3:Emitter U Type Package Unit: mm ˚C ˚C 1 2 3 2.3±0.1 0.5±0.1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (TC=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE * Conditions VCB = –20V, IE = 0 VCE = –10V, IB = 0 VEB = –5V, IC = 0 IC = –1mA, IE = 0 IC = –2mA, IB = 0 VCE = –5V, IC = –1A IC = –1.5A, IB = – 0.15A IC = –2A, IB = – 0.2A VCB = –5V, IE = 0.5A, f = 20.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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