SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1276 2SD1276A
www.datasheet4u.com
DES...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1276 2SD1276A
www.datasheet4u.com
DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB950/950A ·High DC current gain ·High-speed switching APPLICATIONS ·For power amplification
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER 2SD1276 VCBO Collector-base
voltage 2SD1276A 2SD1276 VCEO Collector-emitter
voltage 2SD1276A VEBO IC ICM Emitter-base
voltage Collector current (DC) Collector current-Peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open collector Open base 80 5 4 8 40 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1276 2SD1276A
CHARACTERISTICS
www.datasheet4u.com
Tj=25
unless otherwise specified PARAMETER Collector-emitter breakdown
voltage 2SD1276 IC=30mA , IB=0 2SD1276A IC=3A ;IB=12mA IC=5A ;IB=20mA VCE=3V; IC=3A 2SD1276 2SD1276A 2SD1276 2SD1276A VCB=60V ;IE=0 0.2 VCB=80V; IE=0 VCE=30V; IB=0 0.5 VCE=40V; IB=0 VEB=5V; IC=0 IC=3A ; VCE=0.5V IC=3A ; VCE=3V IC=0.5A; VCE=10V;f=1MHz 1000 2000 20 10000 MHz 2 mA mA mA 80 2 4 2.5 V V V CONDITIONS MIN 60 V TYP. MAX UNIT
SYMBOL
V(BR)CEO
VCEsat-1 VCEsatVBE
Collector-emitter saturation
voltage Collector-emitter saturation
voltage Base-emitter
voltage Collector cut-off current
ICBO
IC...