Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type Darlington
0.7±0.1
For power amplificatio...
Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type Darlington
0.7±0.1
For power amplification Complementary to 2SB949 and 2SB949A
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
Unit: mm
q q
16.7±0.3
q
High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 60 80 60 80 5 4 2 35 2 150 –55 to +150 Unit V
7.5±0.2
s Features
φ3.1±0.1
4.0
14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD1275 2SD1275A 2SD1275 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.4±0.1
1.3±0.2
Solder Dip
0.8±0.1
0.5 –0.1
+0.2
2.54±0.25 5.08±0.5
emitter
voltage 2SD1275A Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W
B
1
2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
3
Internal Connection
C
˚C ˚C
E
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter
voltage 2SD1275 2SD1275A 2SD1275 2SD1275A 2SD1275 2SD1275A
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf
*
Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = –8m...