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2SD1263 Datasheet

Part Number 2SD1263
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1263 Datasheet2SD1263 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1263 2SD1263A www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High breakdown voltalge APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SD1263 VCBO Collector-base voltage 2SD1263A 2SD1263 VCEO Collector-emitter voltage 2SD1263A VEBO IC ICM Emitter-base voltage Collecto.

  2SD1263   2SD1263






Part Number 2SD1263
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1263 Datasheet2SD1263 Datasheet (PDF)

Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm s q q Features High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 350 400 250 300 5 1.5 0.75 35 2 150 –55 to +150 Unit V 2SD1263 2SD1263A 2SD1263 14.0±0.5 base vo.

  2SD1263   2SD1263







Part Number 2SD1263
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1263 Datasheet2SD1263 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1263 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 250V(Min) ·High Collector Power Dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Ba.

  2SD1263   2SD1263







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1263 2SD1263A www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High breakdown voltalge APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SD1263 VCBO Collector-base voltage 2SD1263A 2SD1263 VCEO Collector-emitter voltage 2SD1263A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 35 150 -55~150 Open collector Open base 300 5 0.75 1.5 2 W V A A Open emitter 400 250 V CONDITIONS VALUE 350 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD1263 IC=30mA ,IB=0 2SD1263A IC=1A, IB=0.2A IC=1A ; VCE=10V VEB=5V; IC=0 2SD1263 2SD1263A 2SD1263 2SD1263A VCE=150V; IB=0 VCE=200V; IB=0 VCE=350V; VBE=0 VCE=400V; VBE=0 IC=0.3A ; VCE=10V IC=1A ; VCE=10V CONDITIONS www.datasheet4u.com 2SD1263 2SD1263A SYMBOL MIN 250 TYP. MAX UNIT VCEO Collector-emitter voltage V 300 1.0 1.5 1.0 1.0 1.0 1.0 1.0 70 10 30 MHz 250 V V mA mA mA mA mA VCEsat VBE IEBO Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current ICEO ICES Collector cut-off current hFE-1 hFE-2 fT DC current gain DC current gain Transition frequ.


2009-05-03 : K1531    J722T    MJ-179P    MJ-xxx    MJ-179P    MJ-xxx    SI7600    2SC5359    2SC5382    2SC5386   


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