2SD1262

Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB939 and 2SB939A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 7 12 8 45 1.3 150 –55 to +150 Unit V 1.5±0.1 1.5max. 10.5min. 2.0 1.1max. 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1262 2SD1262A 2SD1262 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.3 10.0±0.3 emitter voltage 2SD1262A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 1.5–0.4 3.0–0.2 V A A W ˚C ˚C 2.0 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1262 2SD1262A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 7V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A IC = 4A, IB = 8mA IC = ...