Power Transistors
2SD1252, 2SD1252A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2...
Power Transistors
2SD1252, 2SD1252A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB929 and 2SB929A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation
voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 6 5 3 35 1.3 150 –55 to +150 Unit V
1.5±0.1
1.5max.
10.5min. 2.0
1.1max.
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD1252 2SD1252A 2SD1252 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
emitter
voltage 2SD1252A Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V
14.7±0.5 4.4±0.5 0 to 0.4
1.5–0.4
V A A W ˚C ˚C
10.0±0.3
4.4±0.5
2.0
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
5.08±0.5
1
2
3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter
voltage 2SD1252 2SD1252A 2SD1252 2SD1252A 2SD1252 2SD1252A
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = ...
