Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
1.5±0.1
8.5±0.2 ...
Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q
10.5min.
Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 8 6 4 1 30 1.3 150 –55 to +150 Unit V
10.0±0.3
1.5max.
1.1max.
2.0
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD1251 2SD1251A 2SD1251 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
emitter
voltage 2SD1251A Emitter to base
voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature
V V
8.5±0.2 6.0±0.3
1.5–0.4
A
2.0
3.0–0.2
A W
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
˚C ˚C
1 2 3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage 2SD1251 2SD1251A
(TC=25˚C)
Symbol ICBO IEBO VCEO(sus)*2 hFE1 hFE2*1 VBE VCE(sat) fT Conditions VCB = 20V, IE = 0 VEB = 8V, IC = 0 IC = 0.2A, L = 25mH VCE = 3V, IC = 0.1A VCE = 3V, IC = 1A VCE = 3V, IC = 1A IC = 2A, IB = 0.4A VCE = 10V, IC = 0.2A, f = 0.5MHz
*2V CEO(sus)
min
typ
max 30 1
4.4±0.5
Unit µA ...