SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type 2SD1249, 2SD1249A
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30...
SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type 2SD1249, 2SD1249A
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
+0.2 9.70 -0.2 +0.15 0.50 -0.15
+0.1 0.80-0.1
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
High collector-base
voltage (Emitter open) VCBO
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) 2SD1249 2SD1249A 2SD1249 2SD1249A VEBO IC ICP PC Ta = 25 Junction temperature Storage temperature Tj Tstg VCEO Symbol VCBO Rating 350 400 250 300 5 0.75 1.5 35 1.3 150 -55 to +150 Unit V V V V V A A W
Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation
3 .8 0
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Free Datasheet http://www.datasheet4u.com/
SMD Type
2SD1249, 2SD1249A
Electrical Characteristics Ta = 25
Parameter Collector-emitter
voltage (Base open) Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SD1249 2SD1249A 2SD1249 2SD1249A 2SD1249 2SD1249A IEBO hFE VBE VCE(sat) fT ton tstg tf ICEO ICES VCE = 350 V,VBE = 0 VCE = 400 V,VBE = 0 VCE = 150 V,IB = 0 VCE = 200 V,IB = 0 VEB = 5 V,IC = 0 VCE = 10 V, IC = 0.3 A VCE = 10 V, IC = 1 A Base-emitter
voltage Collector-emitter saturation
voltage Transition frequency Turn-on time Strage time Fall time VCE = 10 V,IC = 1 A IC = 1 A, IB ...