isc Silicon NPN Darlington Power Transistor
2SD1230
DESCRIPTION ·High DC Current Gain
: hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.) ·Complement to Type 2SB913 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for motor drivers, printer hammer drivers...
