2SD1198

Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 6.9±0.1 1.5 0.4 s Features q 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 q q 0.85 (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 Unit V 2.5 2.5 3 2 1 Parameter Collector to base voltage Collector to 2SD1198 2SD1198A 2SD1198 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg emitter voltage 2SD1198A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A A W ˚C ˚C ≈200Ω E B 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package Internal Connection C Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1198 2SD1198A 2SD1198 2SD1198A 2SD1198 2SD1198A (Ta=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE *1 Conditions VCB = 25V, IE = 0 VCB = 45V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IB = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = IC = 1A, IB = 1A*2 IC = 1A, IB = 1mA*2 1mA*2 VCB = 10V, IE = –50mA, f = 200MHz min typ 1.25±0.05 s Absolute Maximum Ratings 0.55±0.1 0.45±0.05 max 100 100 100 4.1±0.2 Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 40000. A shunt resistor...