2SD1196

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 4A ·Low Saturation Voltage ·Complement to Type 2SB886 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 1.75 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1196 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1196 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 8mA ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 4A; VCE= 3V fT Current-Gain—Bandwidth Product IC= 4A; VCE= 5V Switc...