isc Silicon NPN Darlington Power Transistor
2SD1191
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: hFE= 2000(Min) @IC= 3.5A ·Low Saturation Voltage ·Complement to Type 2SB881 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for motor drivers, printer h...
