isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1200V (Min) ·High Reliability ·Minimum Lo...
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1200V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1200
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current- Continuous
5
A
ICP
Collector Current-Peak
PC
Collector Power Dissipation @ TC TC=25℃
TJ
Junction Temperature
7
A
50
W
150
℃
Tstg
Storage Temperature Range
-45~150
℃
2SD1185
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 4A; IB= 0.8A
ICES
Collector Cutoff Current
VCE= 1200V; RBE= 0
hFE
DC Current Gain
IC= 0.3A; VCE= 5V
tf
Fall Time
tstg
Storage Time
IC= 4A, IB1= 0.8A, IB2= 2A
2SD1185
MIN TYP. MAX UNIT
800
V
6
V
5.0
V
1.5
V
0.5 mA
10
30
1.0 μs
1.0
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented o...
